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PDTC114ES,126

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NXP Semiconductors PDTC114ES,126

Manufacturer :
NXP Semiconductors
Mfr. Part # :
PDTC114ES,126
Description
TRANS PREBIAS NPN 500MW TO92-3
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
PDTC114ES,126 PDF
In Stock
332
PDTC114ES,126 Tech Specifications
Series-
PackageTape & Box (TB)
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
Frequency - Transition-
Power - Max500 mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3
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