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FJV3112RMTF

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Sanyo Semiconductor/ON Semiconductor FJV3112RMTF

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FJV3112RMTF
Description
TRANS PREBIAS NPN 200MW SOT23-3
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FJV3112RMTF PDF
In Stock
984
FJV3112RMTF Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250 MHz
Power - Max200 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
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