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PDTB123YS,126

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NXP Semiconductors PDTB123YS,126

Manufacturer :
NXP Semiconductors
Mfr. Part # :
PDTB123YS,126
Description
TRANS PREBIAS PNP 500MW TO92-3
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
PDTB123YS,126 PDF
In Stock
310
PDTB123YS,126 Tech Specifications
Series-
PackageTape & Box (TB)
Part StatusObsolete
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500 mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3
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