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SISS60DN-T1-GE3

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Vishay / Siliconix SISS60DN-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SISS60DN-T1-GE3
Description
MOSFET N-CH 30V 50.1/181.8A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SISS60DN-T1-GE3 PDF
SISS60DN-T1-GE3 Tech Specifications
SeriesTrenchFET® Gen IV
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C50.1A (Ta), 181.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.31mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs85.5 nC @ 10 V
Vgs (Max)+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds3960 pF @ 15 V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)5.1W (Ta), 65.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S
Package / CasePowerPAK® 1212-8S
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