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BSC022N04LSATMA1

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IR (Infineon Technologies) BSC022N04LSATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
BSC022N04LSATMA1
Description
MOSFET N-CH 40V 100A TDSON-8-6
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
BSC022N04LSATMA1 PDF
BSC022N04LSATMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 20 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-6
Package / Case8-PowerTDFN
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