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FQI19N20CTU

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Sanyo Semiconductor/ON Semiconductor FQI19N20CTU

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FQI19N20CTU
Description
MOSFET N-CH 200V 19A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQI19N20CTU PDF
In Stock
784
FQI19N20CTU Tech Specifications
SeriesQFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1080 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 139W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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Request Quote Now

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