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SUD50N10-18P-GE3

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Vishay / Siliconix SUD50N10-18P-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SUD50N10-18P-GE3
Description
MOSFET N-CH 100V 8.2A/50A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SUD50N10-18P-GE3 PDF
In Stock
492
SUD50N10-18P-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C8.2A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 50 V
FET Feature-
Power Dissipation (Max)3W (Ta), 136.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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