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DF11MR12W1M1B11BOMA1

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Rochester Electronics DF11MR12W1M1B11BOMA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
DF11MR12W1M1B11BOMA1
Description
IGBT MODULE
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
DF11MR12W1M1B11BOMA1 PDF
In Stock
482
DF11MR12W1M1B11BOMA1 Tech Specifications
Series*
PackageBulk
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C50A
Rds On (Max) @ Id, Vgs23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs125nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds3950pF @ 800V
Power - Max20mW
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule
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We can supply DF11MR12W1M1B11BOMA1, use the request quote form to request DF11MR12W1M1B11BOMA1 pirce and lead time. IKeyParts.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DF11MR12W1M1B11BOMA1. The price and lead time for DF11MR12W1M1B11BOMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DF11MR12W1M1B11BOMA1. We look forward to working with you to establish long-term relations of cooperation.

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