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BSM180D12P2C101

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ROHM Semiconductor BSM180D12P2C101

Manufacturer :
ROHM Semiconductor
Mfr. Part # :
BSM180D12P2C101
Description
MOSFET 2N-CH 1200V 180A MODULE
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
BSM180D12P2C101 PDF
In Stock
223
BSM180D12P2C101 Tech Specifications
Series-
PackageBulk
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C204A (Tc)
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds23000pF @ 10V
Power - Max1130W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting Type-
Package / CaseModule
Supplier Device PackageModule
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