Series | HEXFET® | |
Package | Bulk | |
Part Status | Active | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 150 V | |
Current - Continuous Drain (Id) @ 25°C | 99A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 12.1mOhm @ 62A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 5.27 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 375W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | D2PAK | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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