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IPB80N06S209ATMA1

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Rochester Electronics IPB80N06S209ATMA1

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPB80N06S209ATMA1
Description
MOSFET N-CH 55V 80A TO263-3-2
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB80N06S209ATMA1 PDF
IPB80N06S209ATMA1 Tech Specifications
SeriesOptiMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2.36 pF @ 25 V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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