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PHT6N06LT,135

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Rochester Electronics PHT6N06LT,135

Manufacturer :
Rochester Electronics
Mfr. Part # :
PHT6N06LT,135
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
PHT6N06LT,135 PDF
PHT6N06LT,135 Tech Specifications
SeriesTrenchMOS™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs150mOhm @ 5A, 5V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs4.5 nC @ 5 V
Vgs (Max)±13V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 8.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA
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Request Quote Now

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