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G3R350MT12J

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GeneSiC Semiconductor G3R350MT12J

Manufacturer :
GeneSiC Semiconductor
Mfr. Part # :
G3R350MT12J
Description
SIC MOSFET N-CH 11A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
G3R350MT12J PDF
G3R350MT12J Tech Specifications
SeriesG3R™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 15 V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds334 pF @ 800 V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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Request Quote Now

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