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FDC855N

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Sanyo Semiconductor/ON Semiconductor FDC855N

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FDC855N
Description
MOSFET N-CH 30V 6.1A SUPERSOT6
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDC855N PDF
In Stock
8334
FDC855N Tech Specifications
SeriesPowerTrench®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs27mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds655 pF @ 15 V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-6
Package / CaseSOT-23-6 Thin, TSOT-23-6
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