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FQD19N10LTF

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Rochester Electronics FQD19N10LTF

Manufacturer :
Rochester Electronics
Mfr. Part # :
FQD19N10LTF
Description
MOSFET N-CH 100V 15.6A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQD19N10LTF PDF
FQD19N10LTF Tech Specifications
SeriesQFET®
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C15.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs100mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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Request Quote Now

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