Series | - | |
Package | Tube | |
Part Status | Active | |
FET Type | N-Channel | |
Technology | SiCFET (Silicon Carbide) | |
Drain to Source Voltage (Vdss) | 1200 V | |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 20V | |
Rds On (Max) @ Id, Vgs | 200mOhm @ 10A, 20V | |
Vgs(th) (Max) @ Id | 4V @ 5mA | |
Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 20 V | |
Vgs (Max) | +22V, -6V | |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 800 V | |
FET Feature | - | |
Power Dissipation (Max) | 125W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247-3 | |
Package / Case | TO-247-3 |
We can supply LSIC1MO120E0160, use the request quote form to request LSIC1MO120E0160 pirce and lead time. IKeyParts.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number LSIC1MO120E0160. The price and lead time for LSIC1MO120E0160 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# LSIC1MO120E0160. We look forward to working with you to establish long-term relations of cooperation.
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