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FQP3N80C

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Sanyo Semiconductor/ON Semiconductor FQP3N80C

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FQP3N80C
Description
MOSFET N-CH 800V 3A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FQP3N80C PDF
FQP3N80C Tech Specifications
SeriesQFET®
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.5 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds705 pF @ 25 V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
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Request Quote Now

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