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IPW60R099P6XKSA1

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IR (Infineon Technologies) IPW60R099P6XKSA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPW60R099P6XKSA1
Description
MOSFET N-CH 600V 37.9A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPW60R099P6XKSA1 PDF
IPW60R099P6XKSA1 Tech Specifications
SeriesCoolMOS™ P6
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3330 pF @ 100 V
FET Feature-
Power Dissipation (Max)278W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3
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