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SIJH112E-T1-GE3

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Vishay / Siliconix SIJH112E-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIJH112E-T1-GE3
Description
MOSFET N-CH 100V 23A/225A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIJH112E-T1-GE3 PDF
In Stock
298
SIJH112E-T1-GE3 Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 225A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8050 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 333W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / Case8-PowerTDFN
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