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SI8487DB-T1-E1

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Vishay / Siliconix SI8487DB-T1-E1

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI8487DB-T1-E1
Description
MOSFET P-CH 30V 4MICROFOOT
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI8487DB-T1-E1 PDF
In Stock
2614
SI8487DB-T1-E1 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs31mOhm @ 2A, 10V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2240 pF @ 15 V
FET Feature-
Power Dissipation (Max)1.1W (Ta), 2.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-Microfoot
Package / Case4-UFBGA
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