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IPB019N08N3GATMA1

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IR (Infineon Technologies) IPB019N08N3GATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPB019N08N3GATMA1
Description
MOSFET N-CH 80V 180A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPB019N08N3GATMA1 PDF
IPB019N08N3GATMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs206 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14200 pF @ 40 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
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