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IMW120R045M1XKSA1

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IR (Infineon Technologies) IMW120R045M1XKSA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IMW120R045M1XKSA1
Description
SICFET N-CH 1.2KV 52A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IMW120R045M1XKSA1 PDF
IMW120R045M1XKSA1 Tech Specifications
SeriesCoolSiC™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1.2 kV
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs52 nC @ 15 V
Vgs (Max)+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds1.9 nF @ 800 V
FET Feature-
Power Dissipation (Max)228W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-41
Package / CaseTO-247-3
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