Series | - | |
Package | Tube | |
Part Status | Active | |
FET Type | - | |
Technology | SiC (Silicon Carbide Junction Transistor) | |
Drain to Source Voltage (Vdss) | 1200 V | |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | - | |
Rds On (Max) @ Id, Vgs | 120mOhm @ 10A | |
Vgs(th) (Max) @ Id | - | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Vgs (Max) | - | |
Input Capacitance (Ciss) (Max) @ Vds | 1403 pF @ 800 V | |
FET Feature | - | |
Power Dissipation (Max) | 170W (Tc) | |
Operating Temperature | 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | - | |
Package / Case | - |
We can supply GA10JT12-263, use the request quote form to request GA10JT12-263 pirce and lead time. IKeyParts.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number GA10JT12-263. The price and lead time for GA10JT12-263 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# GA10JT12-263. We look forward to working with you to establish long-term relations of cooperation.
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