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IPP147N12N3G

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Rochester Electronics IPP147N12N3G

Manufacturer :
Rochester Electronics
Mfr. Part # :
IPP147N12N3G
Description
MOSFET N-CH 120V 56A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPP147N12N3G PDF
IPP147N12N3G Tech Specifications
SeriesOptiMOS™ 3
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120 V
Current - Continuous Drain (Id) @ 25°C56A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs14.7mOhm @ 56A, 10V
Vgs(th) (Max) @ Id4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3220 pF @ 60 V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3
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