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SIHP11N80AE-GE3

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Vishay / Siliconix SIHP11N80AE-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIHP11N80AE-GE3
Description
MOSFET N-CH 800V 8A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIHP11N80AE-GE3 PDF
In Stock
1035
SIHP11N80AE-GE3 Tech Specifications
SeriesE
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds804 pF @ 100 V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
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Request Quote Now

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