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SSM6G18NU,LF

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Toshiba Electronic Devices and Storage Corporation SSM6G18NU,LF

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
SSM6G18NU,LF
Description
MOSFET P-CH 20V 2A 6UDFN
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SSM6G18NU,LF PDF
In Stock
6000
SSM6G18NU,LF Tech Specifications
Series-
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs112mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs4.6 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds270 pF @ 10 V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-UDFN (2x2)
Package / Case6-WDFN Exposed Pad
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