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NTH4L080N120SC1

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Sanyo Semiconductor/ON Semiconductor NTH4L080N120SC1

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
NTH4L080N120SC1
Description
TRANS SJT N-CH 1200V 29A TO247-4
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NTH4L080N120SC1 PDF
In Stock
416
NTH4L080N120SC1 Tech Specifications
Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs56 nC @ 20 V
Vgs (Max)+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds1670 pF @ 800 V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4
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