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GT10J312(Q)

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Toshiba Electronic Devices and Storage Corporation GT10J312(Q)

Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Mfr. Part # :
GT10J312(Q)
Description
IGBT 600V 10A 60W TO220SM
Catalog
Transistors - IGBTs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
GT10J312(Q) PDF
In Stock
583
GT10J312(Q) Tech Specifications
Series-
PackageTube
Part StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)10 A
Current - Collector Pulsed (Icm)20 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max60 W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C400ns/400ns
Test Condition300V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr)200 ns
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-220SM
Request Quote Now
Request Quote Now

We can supply GT10J312(Q), use the request quote form to request GT10J312(Q) pirce and lead time. IKeyParts.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number GT10J312(Q). The price and lead time for GT10J312(Q) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# GT10J312(Q). We look forward to working with you to establish long-term relations of cooperation.

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