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HGTP2N120CN

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Sanyo Semiconductor/ON Semiconductor HGTP2N120CN

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
HGTP2N120CN
Description
IGBT 1200V 13A 104W TO220AB
Catalog
Transistors - IGBTs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
HGTP2N120CN PDF
In Stock
603
HGTP2N120CN Tech Specifications
Series-
PackageTube
Part StatusObsolete
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)13 A
Current - Collector Pulsed (Icm)20 A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 2.6A
Power - Max104 W
Switching Energy96µJ (on), 355µJ (off)
Input TypeStandard
Gate Charge30 nC
Td (on/off) @ 25°C25ns/205ns
Test Condition960V, 2.6A, 51Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
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Request Quote Now

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