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PDTC123JK,115

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NXP Semiconductors PDTC123JK,115

Manufacturer :
NXP Semiconductors
Mfr. Part # :
PDTC123JK,115
Description
TRANS PREBIAS NPN 250MW SMT3
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
PDTC123JK,115 PDF
In Stock
417
PDTC123JK,115 Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)1µA
Frequency - Transition-
Power - Max250 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSMT3; MPAK
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