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SPI11N60C3XKSA1

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IR (Infineon Technologies) SPI11N60C3XKSA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
SPI11N60C3XKSA1
Description
MOSFET N-CH 650V 11A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SPI11N60C3XKSA1 PDF
SPI11N60C3XKSA1 Tech Specifications
SeriesCoolMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
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Request Quote Now

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