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IPP50R299CPHKSA1

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IR (Infineon Technologies) IPP50R299CPHKSA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPP50R299CPHKSA1
Description
MOSFET N-CH 550V 12A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPP50R299CPHKSA1 PDF
In Stock
640
IPP50R299CPHKSA1 Tech Specifications
SeriesCoolMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1190 pF @ 100 V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3
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