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ISP25DP06LMSATMA1

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IR (Infineon Technologies) ISP25DP06LMSATMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
ISP25DP06LMSATMA1
Description
MOSFET P-CH 60V 1.9A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
ISP25DP06LMSATMA1 PDF
In Stock
699
ISP25DP06LMSATMA1 Tech Specifications
SeriesOptiMOS™
PackageTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs250mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs13.9 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds420 pF @ 30 V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223
Package / CaseTO-261-3
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