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SI7100DN-T1-GE3

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Vishay / Siliconix SI7100DN-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI7100DN-T1-GE3
Description
MOSFET N-CH 8V 35A PPAK 1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI7100DN-T1-GE3 PDF
In Stock
548
SI7100DN-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs105 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds3810 pF @ 4 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 52W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8
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Request Quote Now

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