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SI1011X-T1-GE3

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Vishay / Siliconix SI1011X-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI1011X-T1-GE3
Description
MOSFET P-CH 12V SC89-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI1011X-T1-GE3 PDF
SI1011X-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C480mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs640mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs4 nC @ 4.5 V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds62 pF @ 6 V
FET Feature-
Power Dissipation (Max)190mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89-3
Package / CaseSC-89, SOT-490
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