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IPD80R2K8CEBTMA1

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IR (Infineon Technologies) IPD80R2K8CEBTMA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
IPD80R2K8CEBTMA1
Description
MOSFET N-CH 800V 1.9A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
IPD80R2K8CEBTMA1 PDF
In Stock
847
IPD80R2K8CEBTMA1 Tech Specifications
SeriesCoolMOS™
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds290 pF @ 100 V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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