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FDC2612_F095

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Sanyo Semiconductor/ON Semiconductor FDC2612_F095

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FDC2612_F095
Description
MOSFET N-CH 200V 1.1A SUPERSOT6
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FDC2612_F095 PDF
In Stock
271
FDC2612_F095 Tech Specifications
SeriesPowerTrench®
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs725mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds234 pF @ 100 V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSOT™-6
Package / CaseSOT-23-6 Thin, TSOT-23-6
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