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SI5406CDC-T1-GE3

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Vishay / Siliconix SI5406CDC-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI5406CDC-T1-GE3
Description
MOSFET N-CH 12V 6A 1206-8
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI5406CDC-T1-GE3 PDF
In Stock
606
SI5406CDC-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 6 V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 5.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package1206-8 ChipFET™
Package / Case8-SMD, Flat Lead
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