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SI4890DY-T1-GE3

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Vishay / Siliconix SI4890DY-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SI4890DY-T1-GE3
Description
MOSFET N-CH 30V 11A 8-SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SI4890DY-T1-GE3 PDF
SI4890DY-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs20 nC @ 5 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)
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