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SUP50N10-21P-GE3

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Vishay / Siliconix SUP50N10-21P-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SUP50N10-21P-GE3
Description
MOSFET N-CH 100V 50A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SUP50N10-21P-GE3 PDF
SUP50N10-21P-GE3 Tech Specifications
SeriesTrenchFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2055 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
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Request Quote Now

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