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FGA50N100BNTD2

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Sanyo Semiconductor/ON Semiconductor FGA50N100BNTD2

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FGA50N100BNTD2
Description
IGBT 1000V 50A 156W TO3P
Catalog
Transistors - IGBTs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FGA50N100BNTD2 PDF
FGA50N100BNTD2 Tech Specifications
Series-
PackageTube
Part StatusLast Time Buy
IGBT TypeNPT and Trench
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)200 A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A
Power - Max156 W
Switching Energy-
Input TypeStandard
Gate Charge257 nC
Td (on/off) @ 25°C34ns/243ns
Test Condition600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)75 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P
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