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FGL60N100BNTD

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Sanyo Semiconductor/ON Semiconductor FGL60N100BNTD

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
FGL60N100BNTD
Description
IGBT 1000V 60A 180W TO264
Catalog
Transistors - IGBTs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
FGL60N100BNTD PDF
FGL60N100BNTD Tech Specifications
Series-
PackageTube
Part StatusNot For New Designs
IGBT TypeNPT and Trench
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)120 A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A
Power - Max180 W
Switching Energy-
Input TypeStandard
Gate Charge275 nC
Td (on/off) @ 25°C140ns/630ns
Test Condition600V, 60A, 51Ohm, 15V
Reverse Recovery Time (trr)1.2 µs
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264-3
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Request Quote Now

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