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HGTP12N60A4D

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Sanyo Semiconductor/ON Semiconductor HGTP12N60A4D

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
HGTP12N60A4D
Description
IGBT 600V 54A TO220-3
Catalog
Transistors - IGBTs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
HGTP12N60A4D PDF
HGTP12N60A4D Tech Specifications
Series-
PackageTube
Part StatusLast Time Buy
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)54 A
Current - Collector Pulsed (Icm)96 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Power - Max167 W
Switching Energy55µJ (on), 50µJ (off)
Input TypeStandard
Gate Charge78 nC
Td (on/off) @ 25°C17ns/96ns
Test Condition390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)30 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
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Request Quote Now

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