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HGTG18N120BND

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Sanyo Semiconductor/ON Semiconductor HGTG18N120BND

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
HGTG18N120BND
Description
IGBT 1200V 54A 390W TO247
Catalog
Transistors - IGBTs - Single
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
HGTG18N120BND PDF
In Stock
448
HGTG18N120BND Tech Specifications
Series-
PackageTube
Part StatusActive
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)54 A
Current - Collector Pulsed (Icm)160 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 18A
Power - Max390 W
Switching Energy1.9mJ (on), 1.8mJ (off)
Input TypeStandard
Gate Charge165 nC
Td (on/off) @ 25°C23ns/170ns
Test Condition960V, 18A, 3Ohm, 15V
Reverse Recovery Time (trr)75 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
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