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DF11MR12W1M1PB11BPSA1

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IR (Infineon Technologies) DF11MR12W1M1PB11BPSA1

Manufacturer :
IR (Infineon Technologies)
Mfr. Part # :
DF11MR12W1M1PB11BPSA1
Description
MOSFET MODULE 1200V
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
DF11MR12W1M1PB11BPSA1 PDF
In Stock
860
DF11MR12W1M1PB11BPSA1 Tech Specifications
SeriesEasyPACK™
PackageTray
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C50A (Tj)
Rds On (Max) @ Id, Vgs22.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs124nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds3680pF @ 800V
Power - Max20mW
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-EASY1B-2
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