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SIB900EDK-T1-GE3

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Vishay / Siliconix SIB900EDK-T1-GE3

Manufacturer :
Vishay / Siliconix
Mfr. Part # :
SIB900EDK-T1-GE3
Description
MOSFET 2N-CH 20V 1.5A SC-75-6
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
SIB900EDK-T1-GE3 PDF
In Stock
465
SIB900EDK-T1-GE3 Tech Specifications
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.5A
Rds On (Max) @ Id, Vgs225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-75-6L Dual
Supplier Device PackagePowerPAK® SC-75-6L Dual
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