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NVMD6N03R2G

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Rochester Electronics NVMD6N03R2G

Manufacturer :
Rochester Electronics
Mfr. Part # :
NVMD6N03R2G
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NVMD6N03R2G PDF
In Stock
4915
NVMD6N03R2G Tech Specifications
Series-
PackageBulk
Part StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds950pF @ 24V
Power - Max1.29W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
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