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EPC2110ENGRT

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EPC EPC2110ENGRT

Manufacturer :
EPC
Mfr. Part # :
EPC2110ENGRT
Description
GAN TRANS 2N-CH 120V BUMPED DIE
Catalog
Transistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
EPC2110ENGRT PDF
EPC2110ENGRT Tech Specifications
SerieseGaN®
PackageTape & Reel (TR)Cut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual) Common Source
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C3.4A
Rds On (Max) @ Id, Vgs60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds80pF @ 60V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
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