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NSVDTC123JET1G

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Sanyo Semiconductor/ON Semiconductor NSVDTC123JET1G

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
NSVDTC123JET1G
Description
TRANS NPN 50V 0.1A SC75
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NSVDTC123JET1G PDF
In Stock
580
NSVDTC123JET1G Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max200 mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSC-75, SOT-416
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