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NSVMMUN2217LT1G

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Sanyo Semiconductor/ON Semiconductor NSVMMUN2217LT1G

Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Mfr. Part # :
NSVMMUN2217LT1G
Description
TRANS PREBIAS NPN 0.246W SOT23
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DataSheet
NSVMMUN2217LT1G PDF
In Stock
826
NSVMMUN2217LT1G Tech Specifications
Series-
PackageTape & Reel (TR)
Part StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max246 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
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